Abstract by J. Ryan Peterson
J. Ryan Peterson
Physics and Astronomy
John Colton, David Allred
Photoluminescence Study of P-type Arsenic-doped Zinc Oxide Thin Films
Zinc oxide is a promising semiconductor for ultraviolet lasers, transparent circuits, and high-temperature devices. Fabricating devices requires n- and p-type material, but reliable p-type doping has proven elusive. We have grown p-type arsenic-doped zinc oxide films using magnetron sputtering. Film quality and dopant properties are examined by stimulating photoluminescence. We find weak band-edge luminescence that improves with arsenic doping and annealing. This suggests successful doping and possible future improvements in the growth process.