Abstract by Jacob Erickson
Chemistry and Biochemistry
Measurement of thin alumina (Al 2 O 3 ) films by spectroscopic ellipsometry and water-contact angle goniometry
Abstract Atomic layer deposition (ALD) is widely used technique in the semiconductor industry
to obtain thin conformal films on silicon and glass substrates. The process involves sequential introduction
of precursors in the reactor followed by a purging process to remove excess reagent.
This is repeated multiple times to obtain thin films of desired thickness and roughness. We
performed ALD on silicon shards to obtain thin alumina films on silicon surfaces. These films
were probed using spectroscopic ellipsometry and water-contact angle (WCA) goniometry.
Spectroscopic ellipsometry (SE) is technique used in surface chemistry to measure film
thickness, optical constants, and surface roughness. Goniometry is used to probe the
hydrophobicity of the surface by measuring the angle between edge of the water droplet and the surface. Material
characterization of thin films along with various analytical techniques used will be described.