Abstract by Benjamin Heiner

Personal Infomation

Presenter's Name

Benjamin Heiner

Degree Level



Jeremy Johnson

Abstract Infomation


Chemistry and Biochemistry

Faculty Advisor

Jeremy Johnson


Finding Enhancement Factors of Micron-scale Metamaterials by the Finite Elemental Method


Recent years have seen advancements in the speed and efficiency of electronic devices, making electronics one of the fastest improving fields today. Research into even higher speed devices suggests the possibility to run at terahertz (THz) frequencies. Operating electronics at THz frequencies will not only offer a 3 order-of-magnitude increase in speed over current silicon-based devices, but operation at higher voltages may also lead to energy savings. To accomplish such advances, many material properties fundamental to high-speed operation need to be researched. This is a challenge because properties of materials under an applied electric field vary with frequency, and key material properties at the targeted THz frequencies have scarcely been characterized. Wide band-gap (WBG) semiconductors are a class of materials that show promise for THz electronics. To characterize WBG semiconductors for electronic use, we utilize the finite element method to determine how different frequencies interact with materials we are studying, including the semiconductors themselves and antenna-like metamaterial structures used to enhance the electric field.