BYU

Abstract by Spencer King

Personal Infomation


Presenter's Name

Spencer King

Degree Level

Undergraduate

Abstract Infomation


Department

Physics and Astronomy

Faculty Advisor

John Colton

Title

Examining Zinc Oxide and Zinc Arsenide Thin Films Through X-Ray Diffraction

Abstract

Zinc oxide is a promising semiconductor with bandgap in the ultraviolet, with various possible uses in circuitry, including LEDs, high-temperature devices, military technology, and lasers. For use in electronic systems, both p-type and n-type zinc oxide is necessary, but native n-type defects make it difficult for stable p-type material to be produced. We are seeking to synthesize p-type zinc oxide through doping with arsenic, by depositing the zinc oxide on a layer of zinc arsenide. To better understand the process, we have used x-ray diffraction to characterize the crystalline structure of the zinc arsenide and zinc oxide layers. From this data, we have come to a better understanding of the composition of our samples and therefore the creation of p-type zinc oxide.