Abstract by Micah Shelley
Physics and Astronomy
Arsenic-Doped Zinc Oxide Thin Film Growth by RF Magnetron Sputtering
Zinc oxide (ZnO) is a wide band gap semiconductor (3.37 eV) with potential applications in LEDs, displays, and military technology. However, ZnO has native n-type defects, making production of p-type material difficult. In order to form stable p-type material we have deposited arsenic-doped ZnO thin films (~100 nm) by radio frequency magnetron sputtering of a pressed ZnO target onto sapphire substrates coated with evaporated zinc arsenide (ZnAs). The thin film growth parameters studied were substrate temperature, time duration of sputtering, thickness of the ZnAs layer, and radio frequency signal power. These parameters have been refined through characterization by x-ray diffraction techniques, photoluminescence, Hall effect and Seebeck effect measurements, and ellipsometry. The effects of annealing at different temperatures on the crystal quality has also been studied. We will report on the effects of the growth and annealing parameters on quality and p-type properties of the thin films.