Abstract by Colter Stewart
Physics and Astronomy
Characterization of ZnO Thin Films by Ellipsometry
We seek to develop stable, p-type zinc oxide for use in optical and electrical devices. By a magnetron sputtering technique, we grow ZnO films doped with zinc arsenide. We then employ ellipsometry to determine the thickness of our grown films. Preliminary measurements indicate that varying sputtering parameters during growth changes the thickness and uniformity of our films. We hope to further use these results to refine the growth process and identify the optimal parameters for fabricating p-type ZnO.