Abstract by Colter Stewart
Physics and Astronomy
Finding the Optical Constants of Zinc Arsenide (Zn3As2) via Spectroscopic Ellipsometry
Zinc oxide is a wide band gap semiconductor with the potential to supplement gallium nitride for violet and UV optoelectronic applications. Renlund et al. have fabricated stable p-type zinc oxide material through magnetron sputtering deposition in oxygen onto a zinc arsenide (Zn3As2) layer. Understanding the thickness and optical properties of the zinc arsenide layer is critical in controlling this process. We report some success using spectroscopic ellipsometry to determine the thickness of evaporated zinc arsenide layers. Determining the optical constants of this layer has been more challenging. We will discuss these difficulties, as well as potential solutions.